The SQM10250E_GE3 is an N-channel TrenchFET® power MOSFET qualified to AEC-Q101 standards for automotive applications. It features a maximum drain-source voltage of 250V and is designed to operate at junction temperatures up to 175°C. The device is 100% Rg and UIS tested, offering low on-resistance and high reliability in a TO-263 (D2PAK) package.
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Technical Specifications
Vishay SQM10250E_GE3 technical specifications.
General
| Drain-Source Voltage (VDS) | 250V |
| Gate-Source Voltage (VGS) | ± 20V |
| Continuous Drain Current (ID) | 45A |
| RDS(on) at VGS = 10 V | 0.052Ω |
| Operating Junction Temperature | -55 to +175°C |
| Single Pulse Avalanche Current (IAS) | 35A |
| Single Pulse Avalanche Energy (EAS) | 61mJ |
Compliance
| Automotive Standard | AEC-Q101 Qualified |
| RoHS | Compliant |
| Halogen-free | According to IEC 61249-2-21 definition |
Datasheet
Vishay SQM10250E_GE3 Datasheet
Download the complete datasheet for Vishay SQM10250E_GE3 to view detailed technical specifications.
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