This automotive N-channel MOSFET is rated for 60 V drain-source voltage and 120 A continuous drain current. It is specified for operation up to 175 °C junction temperature and is offered in a TO-263 (D2PAK) package with low thermal resistance. Maximum on-resistance is 3.5 mΩ at 10 V gate drive and 3.9 mΩ at 4.5 V gate drive. The device is AEC-Q101 qualified, 100% Rg and UIS tested, and the GE3 ordering code is lead-free and halogen-free.
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Vishay SQM120N06-3m5L technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 120A |
| Pulsed Drain Current | 480A |
| Gate-Source Voltage | ±20V |
| On-Resistance @ VGS=10 V | 3.5 maxmΩ |
| On-Resistance @ VGS=4.5 V | 3.9 maxmΩ |
| Gate Threshold Voltage | 1.5 to 2.5V |
| Power Dissipation | 375W |
| Operating Junction Temperature | -55 to +175°C |
| Junction-to-Case Thermal Resistance | 0.4°C/W |
| Input Capacitance | 11755 typpF |
| Output Capacitance | 1112 typpF |
| Reverse Transfer Capacitance | 481 typpF |
| Total Gate Charge | 220 typnC |
| Single Pulse Avalanche Current | 100A |
| Single Pulse Avalanche Energy | 500mJ |
| Forward Transconductance | 190 typS |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
| Aec-q101 | Qualified |
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