This automotive N-channel power MOSFET is rated for 60 V drain-source voltage and 100 A continuous drain current at a 25 °C case temperature. It uses TrenchFET technology in a TO-263 package and is qualified to AEC-Q101. Maximum on-resistance is 3.9 mΩ at 10 V gate drive and 5.0 mΩ at 4.5 V gate drive. The device supports operation from -55 °C to +175 °C and has up to 150 W power dissipation.
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Vishay SQM50034EL technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current at 125 °C | 80A |
| On-Resistance at VGS = 10 V | 0.0039 maxohm |
| On-Resistance at VGS = 4.5 V | 0.0050 maxohm |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 1.5 to 2.5V |
| Pulsed Drain Current | 320A |
| Single Pulse Avalanche Current | 48A |
| Single Pulse Avalanche Energy | 115mJ |
| Maximum Power Dissipation | 150W |
| Input Capacitance | 4425 typpF |
| Forward Transconductance | 97 typS |
| Operating Junction and Storage Temperature | -55 to +175°C |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| Thermal Resistance Junction-to-Case | 1°C/W |
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