N-Channel Power MOSFET, 150V Vdss, 85A continuous drain current, and 19mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-263-3 surface mount package, 375W max power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 22ns turn-on delay and 40ns turn-off delay. It is RoHS compliant and Halogen Free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM85N15-19_GE3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 85A |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 6.285nF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM85N15-19_GE3 Datasheet
Download the complete datasheet for Vishay SQM85N15-19_GE3 to view detailed technical specifications.
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