P-channel MOSFET featuring 17.5A continuous drain current and a low on-resistance of 0.02 ohms. This silicon Metal-oxide Semiconductor FET operates up to 175°C and has a 12V drain-source voltage rating. Designed with a single element and five terminals, it utilizes a leadless 1212-8 package. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Vishay SQS405EN-T1_GE3 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Vishay SQS405EN-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQS405EN-T1_GE3 to view detailed technical specifications.
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