This device is an automotive-grade N-channel trench power MOSFET rated for 60 V drain-to-source voltage. It is housed in a PowerPAK 1212-8W surface-mount package and is qualified to AEC-Q101. The MOSFET supports 18 A continuous drain current and 62.5 W maximum power dissipation at case temperature of 25 °C. Maximum on-resistance is 11.2 mΩ at 10 V gate drive and 16.0 mΩ at 4.5 V gate drive. The operating junction and storage temperature range extends from -55 °C to 175 °C, and the ordering information identifies it as lead-free and halogen-free.
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Vishay SQS660CENW technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 18A |
| Power Dissipation | 62.5W |
| On-Resistance @ VGS = 10 V | 0.0112 maxΩ |
| On-Resistance @ VGS = 4.5 V | 0.0160 maxΩ |
| Gate Threshold Voltage | 1.5 to 2.5V |
| Total Gate Charge | 26 maxnC |
| Input Capacitance | 1363 typpF |
| Pulsed Drain Current | 72A |
| Operating Junction Temperature Range | -55 to 175°C |
| AEC-Q101 Qualification | Yes |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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