N-channel TrenchFET power MOSFET supports 80 V drain-source voltage and 120 A continuous drain current in a TO-263 package. Maximum on-resistance is 3.2 mΩ at 10 V gate drive, with 94 nC typical total gate charge and 175 °C maximum junction temperature. The device is 100% gate-resistance and unclamped-inductive-switching tested, and the lead-free, halogen-free orderable version is available.
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| FET Type | N-Channel |
| Drain-Source Voltage | 80V |
| Configuration | Single |
| Package | TO-263 |
| Continuous Drain Current | 120A |
| Pulsed Drain Current | 500A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance at 10 V | 0.0032 maxΩ |
| Drain-Source On-Resistance at 7.5 V | 0.0034 maxΩ |
| Total Gate Charge | 94 typnC |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 7910 typpF |
| Output Capacitance | 3250 typpF |
| Reverse Transfer Capacitance | 348 typpF |
| Operating Junction Temperature Range | -55 to +175°C |
| Junction-to-Case Thermal Resistance | 0.4°C/W |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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