Single channel, transistor output optocoupler featuring a phototransistor output. Offers a high isolation voltage of 5kV and a collector emitter voltage (VCEO) of 70V. Achieves a current transfer ratio (CTR) between 200-400% with a maximum collector current of 50mA. Designed for through-hole mounting in a PDIP package, operating from -40°C to 100°C.
PackagePDIP
MountingThrough Hole
Power265mW
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Technical Specifications
Vishay TCET1109G technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 70V |
| Collector-emitter Voltage-Max | 300mV |
| Current Transfer Ratio | 400% |
| Forward Current | 60mA |
| Input Current | 50mA |
| Input Type | DC |
| Isolation Voltage | 5kV |
| Max Collector Current | 50mA |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 265mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 70V |
| Package Quantity | 4000 |
| Packaging | Rail/Tube |
| Power Dissipation | 265mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.25V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay TCET1109G Datasheet
Download the complete datasheet for Vishay TCET1109G to view detailed technical specifications.
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