The VQ1000P-2 is a 4-element power MOSFET from Vishay, packaged in a PDIP case and available in tape and reel packaging. It can handle a continuous drain current of 225mA and a gate to source voltage of 20V. The device is rated for operation between -55°C and 150°C. With a power dissipation of 2W, it is suitable for a variety of applications. Note that this product is not RoHS compliant.
PackagePDIP
MountingThrough Hole
Power2W
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Technical Specifications
Vishay VQ1000P-2 technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 225mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 4 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay VQ1000P-2 Datasheet
Download the complete datasheet for Vishay VQ1000P-2 to view detailed technical specifications.
No datasheet is available for this part.
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