The VS-SF50LA120 is a 1200 V silicon carbide (SiC) MOSFET power module in a low side chopper configuration. It features Vishay's latest generation SiC MOSFET technology integrated with a soft body diode for low reverse recovery and reduced switching losses. The device is housed in an industry-standard SOT-227 package providing 2500 V electrical insulation and is designed for high efficiency in medium to high frequency applications.
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Technical Specifications
Vishay VS-SF50LA120 technical specifications.
General
| Drain-to-Source Voltage (Vdss) | 1200V |
| Continuous Drain Current (Id) | 50A |
| Static Drain-to-Source On-Resistance (Rds(on)) | 43mΩ |
| Maximum Operating Junction Temperature | 175°C |
| Insulation Voltage (Visol) | 2500V |
| Configuration | Low side chopper |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay VS-SF50LA120 Datasheet
Download the complete datasheet for Vishay VS-SF50LA120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.