The C3M0075120J is a 1200V Silicon Carbide (SiC) Power MOSFET utilizing C3M technology. It features high blocking voltage with low on-resistance, fast switching speeds with low capacitances, and a fast intrinsic diode with low reverse recovery (Qrr). It is optimized for high-efficiency power conversion applications including renewable energy, EV battery chargers, and high-voltage DC/DC converters.
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Technical Specifications
Wolfspeed C3M0075120J technical specifications.
General
| Drain-Source Voltage (Vds) | 1200V |
| Continuous Drain Current (Id) | 30A |
| Drain-Source On-Resistance (Rds(on)) Typ. | 75mΩ |
| Drain-Source On-Resistance (Rds(on)) Max. | 90mΩ |
| Total Gate Charge (Qg) | 51nC |
| Input Capacitance (Ciss) Typ. | 1100pF |
| Power Dissipation (Pd) | 113.6W |
| Operating Junction Temperature | -55 to +150°C |
| Moisture Sensitivity Level | 3MSL |
Compliance
| RoHS | ROHS3 Compliant |
| Halogen Free | Yes |
| REACH | REACH Affected |
Datasheet
Wolfspeed C3M0075120J Datasheet
Download the complete datasheet for Wolfspeed C3M0075120J to view detailed technical specifications.
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