Wolfspeed is a global leader in silicon carbide and gallium nitride (GaN) semiconductors, offering high-performance power and RF solutions for electric vehicles, 5G infrastructure, and industrial applications.
650 V, 20 A, Silicon Carbide Schottky Diode
SiC MOSFET, 47 mOhm, 1200 V, TSC (U2), Industrial
Two-Channel Isolated Gate Driver for Gen3 62mm HM3 Power Modules
GaN HEMT Die, 70 W, 40 V, DC-18 GHz
RF Power GaN HEMT 100W DC-3GHz 28V-50V
Six-Channel Gate Driver Board for 1200V SiC MOSFET Power Modules
1200 V, 25 mΩ, Discrete Silicon Carbide (SiC) MOSFET
1200 V, 300 A, Silicon Carbide Half-Bridge Power Module
1200 V, 47 mΩ, Discrete Gen 4 Silicon Carbide (SiC) MOSFET
1200 V, 65 mΩ, TO-263-7 XL, Discrete Silicon Carbide (SiC) MOSFET
1200V, 25mΩ, N-Channel Silicon Carbide (SiC) MOSFET, TSC (U2) Package
1200 V, 47 mΩ, Discrete Silicon Carbide (SiC) MOSFET
1200 V, 21 mΩ, Silicon Carbide (SiC) MOSFET
1000 V, 120 mΩ, Discrete SiC MOSFET, TO-247-4
Wolfspeed C4D02120E-TR 1200V 2A Z-Rec Silicon Carbide (SiC) Schottky Diode in TO-252 Package
Silicon Carbide Power MOSFET 650 V, 25 mΩ, TO-247-3
1700 V, 45 mΩ Silicon Carbide Power MOSFET
1200 V, 65 mΩ, Discrete Silicon Carbide (SiC) MOSFET
1200 V, 36 mΩ, TO-247-4-LP, Industrial Silicon Carbide (SiC) MOSFET
50 W, DC - 4 GHz, 28 V High Performance Gallium Nitride (GaN) HEMT
