PNP bipolar junction transistor (BJT) for through-hole mounting in a TO-220 package. Features a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 3A. Offers a minimum DC current gain (hFE) of 10 and a maximum power dissipation of 2W. Operates across a temperature range of -65°C to 150°C.
PackageTO-220
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics TIP32C technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
3MHz
Height
9.15mm
hFE Min
10
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics TIP32C Datasheet
Download the complete datasheet for Stmicroelectronics TIP32C to view detailed technical specifications.
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