The ALD1101APAL is a 2 N-Channel MOSFET with a continuous drain current of 40mA and a drain to source breakdown voltage of -12V. It has a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. The device is packaged in a DIP package and is mounted through a hole. It has a maximum power dissipation of 500mW and a gate to source voltage of 13.2V.
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Advanced Linear Devices ALD1101APAL technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 40mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 75R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 10pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 75R |
| RoHS | Compliant |
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