The ALD1102ASAL is a P-channel MOSFET with a drain to source breakdown voltage of -12V and a drain to source resistance of 180R. It has a maximum operating temperature of 70°C and a maximum power dissipation of 500mW. The device is packaged in a SOIC package and is suitable for surface mount applications.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Advanced Linear Devices ALD1102ASAL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Advanced Linear Devices ALD1102ASAL technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -16mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 180R |
| Drain to Source Voltage (Vdss) | 10.6V |
| Gate to Source Voltage (Vgs) | -13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 270R |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1102ASAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1102ASAL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
