The ALD1102PAL is a P-channel MOSFET with a drain to source breakdown voltage of -12V and a drain to source resistance of 180R. It has a maximum power dissipation of 500mW and a continuous drain current of -16mA. The device is packaged in a DIP package and is suitable for through hole mounting. The ALD1102PAL operates within a temperature range of 0°C to 70°C.
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Advanced Linear Devices ALD1102PAL technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | -16mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 180R |
| Drain to Source Voltage (Vdss) | 10.6V |
| Gate to Source Voltage (Vgs) | -13.2V |
| Input Capacitance | 10pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 270R |
| RoHS | Compliant |
Download the complete datasheet for Advanced Linear Devices ALD1102PAL to view detailed technical specifications.
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