PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1103PBL technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 16mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 270R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 10pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 75R |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1103PBL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1103PBL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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