Advanced Linear Devices
ALD1103PBL
P-CHANNEL 2 N and 2 P-Channel FET, 10.6V Vdss, 13.2V Vgs, 16mA ID, 500mW PD, DIP
The ALD1103PBL is a P-channel FET with 2 N and 2 P-channel configurations. It has a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. The device is packaged in a DIP package and is available in quantities of 25. The ALD1103PBL has a maximum power dissipation of 500mW and a continuous drain current of 16mA. It also features a drain to source breakdown voltage of -12V and a drain to source resistance of 270R.
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power500mW
Quick Jump:
Technical Specifications
Advanced Linear Devices ALD1103PBL technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 16mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 270R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 10pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 75R |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1103PBL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1103PBL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
