The ALD1103SB is a P-channel junction field-effect transistor with a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. It has a drain to source breakdown voltage of -12V and a drain to source resistance of 270 ohms. The device is rated for a continuous drain current of -16mA and a power dissipation of 500mW. The ALD1103SB is packaged in a small outline R-PDSO-G14 package and is not RoHS compliant.
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Advanced Linear Devices ALD1103SB technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -16mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 270R |
| Gate to Source Voltage (Vgs) | 13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 56 |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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