ALD1103SB

Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-14

PackageSOIC

PolarityP-CHANNEL

Power500mW

Quick Jump:

Advanced Linear Devices ALD1103SB technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

-16mA

Drain to Source Breakdown Voltage

-12V

Drain to Source Resistance

270R

Gate to Source Voltage (Vgs)

13.2V

Max Operating Temperature

70°C

Min Operating Temperature

0°C

Package Quantity

Polarity

P-CHANNEL

Power Dissipation

500mW

RoHS Compliant

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.