The ALD1105SBL is a P-channel MOSFET with two N-channel and two P-channel devices in a single package. It has a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. The device can handle a maximum power dissipation of 500mW and has a drain to source breakdown voltage of -12V. The input capacitance is 3pF and the drain to source resistance is 1.2kΩ. The device is available in a surface mount SOIC package.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1105SBL technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.2kR |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 3pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1105SBL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1105SBL to view detailed technical specifications.
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