Advanced Linear Devices
ALD1106SB
Small Signal Field-Effect Transistor, 12V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PackageSOIC
PolarityN-CHANNEL
Power500mW
Quick Jump:
Technical Specifications
Advanced Linear Devices ALD1106SB technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.8mA
Drain to Source Breakdown Voltage
13.2V
Drain to Source Resistance
350R
Gate to Source Voltage (Vgs)
13.2V
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Package Quantity
56
Polarity
N-CHANNEL
Power Dissipation
500mW
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Advanced Linear Devices ALD1106SB Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1106SB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
