The ALD1106SB is a N-CHANNEL JFET with a drain to source breakdown voltage of 13.2V and a continuous drain current of 4.8mA. It has a power dissipation of 500mW and is packaged in a SOIC-14 package. The device is rated for operation between 0°C and 70°C. It is not RoHS compliant.
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Advanced Linear Devices ALD1106SB technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.8mA |
| Drain to Source Breakdown Voltage | 13.2V |
| Drain to Source Resistance | 350R |
| Gate to Source Voltage (Vgs) | 13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 56 |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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