Surface mount N-channel MOSFET with 10.6V drain-source voltage (Vdss) and 4.8mA continuous drain current (ID). Features 12V drain-to-source breakdown voltage and 350 Ohm drain-to-source resistance. Operates within a 0°C to 70°C temperature range, with a maximum power dissipation of 500mW. Packaged in a 14-pin SOIC for rail/tube distribution.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1106SBL technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.8mA |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 350R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 3pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 56 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1106SBL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1106SBL to view detailed technical specifications.
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