Advanced Linear Devices
ALD1107PB
P-Channel MOSFET, -12V Drain to Source Breakdown, 500mW Power Dissipation, PDIP
The ALD1107PB is a P-channel MOSFET with a drain to source breakdown voltage of -12V and a power dissipation of 500mW. It is packaged in a PDIP package and has a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. The device is not RoHS compliant. The MOSFET has a continuous drain current of -2mA and a gate to source voltage of -13.2V, with a drain to source resistance of 1.8kΩ.
PackagePDIP
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1107PB technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.8kR |
| Gate to Source Voltage (Vgs) | -13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 50 |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Advanced Linear Devices ALD1107PB Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1107PB to view detailed technical specifications.
No datasheet is available for this part.
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