Small Signal Field-Effect Transistor, 10.6V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, PBL, DIP-14
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Advanced Linear Devices ALD1107PBL technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.8kR |
| Drain to Source Voltage (Vdss) | 10.6V |
| Gate to Source Voltage (Vgs) | -13.2V |
| Input Capacitance | 3pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 1.8kR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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