The ALD1107SB is a P-channel junction field-effect transistor with a drain to source breakdown voltage of -12V and a drain to source resistance of 1.8kR. It has a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. The device is packaged in a small outline R-PDSO-G14 package and is not RoHS compliant.
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Advanced Linear Devices ALD1107SB technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.8kR |
| Gate to Source Voltage (Vgs) | -13.2V |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Package Quantity | 56 |
| Polarity | P-CHANNEL |
| Power Dissipation | 501mW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
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