The ALD110808ASCL is a 4 N-Channel MOSFET with a Drain to Source Breakdown Voltage of 10V and a Continuous Drain Current of 3mA. It features a maximum power dissipation of 500mW and a maximum operating temperature of 70°C. The device is packaged in a SOIC package and is suitable for surface mount applications.
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Advanced Linear Devices ALD110808ASCL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 48 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
| RoHS | Compliant |
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