The ALD1108EPCL is a 4 N-Channel MOSFET packaged in a PDIP with a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. It has a drain to source breakdown voltage of 10V and a drain to source resistance of 500R. The device can handle a maximum power dissipation of 600mW and a continuous drain current of 12mA. The input capacitance is 25pF and the gate to source voltage is 10.6V.
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Advanced Linear Devices ALD1108EPCL technical specifications.
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 12mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 25pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
| RoHS | Compliant |
Download the complete datasheet for Advanced Linear Devices ALD1108EPCL to view detailed technical specifications.
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