PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
Quick Jump:
Technical Specifications
Advanced Linear Devices ALD1108ESCL technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10V |
| FET Type | 4 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 25pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 48 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1108ESCL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1108ESCL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
