The ALD110902SAL is a 2 N-Channel MOSFET from Advanced Linear Devices with a Drain to Source Breakdown Voltage of 10V and a Max Power Dissipation of 500mW. It features a Gate to Source Voltage of 10.6V and an Input Capacitance of 2.5pF. The device is packaged in a SOIC package and is rated for operation between 0°C and 70°C. It is available in quantities of 50 per rail/Tube packaging.
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Advanced Linear Devices ALD110902SAL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Advanced Linear Devices ALD110902SAL to view detailed technical specifications.
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