The ALD110908APAL is a 2 N-Channel MOSFET with a Drain to Source Breakdown Voltage of 10V and a Max Power Dissipation of 500mW. It is packaged in a DIP package and is suitable for through hole mounting. The device operates over a temperature range of 0°C to 70°C. The ALD110908APAL is part of the EPAD series.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD110908APAL technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 3mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD110908APAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD110908APAL to view detailed technical specifications.
No datasheet is available for this part.