Advanced Linear Devices
ALD110914PAL
2 N-Channel MOSFET, 10V Drain to Source Breakdown, 500mW Power Dissipation, Through Hole DIP
The ALD110914PAL is a 2 N-Channel MOSFET with a drain to source breakdown voltage of 10V and a maximum power dissipation of 500mW. It features a through hole DIP package and operates within a temperature range of 0°C to 70°C. The device has an input capacitance of 2.5pF and a drain to source resistance of 500R. It is suitable for use in a variety of applications where a low power dissipation and high switching speed are required.
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD110914PAL technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 3mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Advanced Linear Devices ALD110914PAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD110914PAL to view detailed technical specifications.
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