The ALD1110EPAL is a 2 N-Channel MOSFET with a drain to source breakdown voltage of 10V and a continuous drain current of 3A. It features a drain to source resistance of 500R and a maximum power dissipation of 600mW. The device is packaged in a PDIP package and is rated for operation between 0°C and 70°C. It is available in quantities of 50 per rail/tube packaging.
PackagePDIP
MountingThrough Hole
PolarityN-CHANNEL
Power600mW
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Technical Specifications
Advanced Linear Devices ALD1110EPAL technical specifications.
General
| Package/Case | PDIP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10V |
| FET Type | 2 N-Channel |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 600mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600mW |
| Rds On Max | 500R |
| Series | EPAD® |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD1110EPAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1110EPAL to view detailed technical specifications.
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