Advanced Linear Devices
ALD1115PAL
Small Signal Field-Effect Transistor, 10.6V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, PAL, DIP-8
PackageDIP
MountingThrough Hole
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1115PAL technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
-2mA
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
500R
Drain to Source Voltage (Vdss)
10.6V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
13.2V
Input Capacitance
3pF
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Power Dissipation
500mW
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
500mW
Rds On Max
1.8kR
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Advanced Linear Devices ALD1115PAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1115PAL to view detailed technical specifications.
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