The ALD1115PAL is a dual P- and N-channel junction field-effect transistor with a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. It has a maximum power dissipation of 500mW and is packaged in a DIP-8 format for through-hole mounting. The device features a drain to source breakdown voltage of -12V and a gate to source voltage of 13.2V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Advanced Linear Devices ALD1115PAL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Advanced Linear Devices ALD1115PAL technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | -2mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 13.2V |
| Input Capacitance | 3pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 1.8kR |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for Advanced Linear Devices ALD1115PAL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
