Advanced Linear Devices
ALD1115SAL
Precision Matched Small Signal MOSFET Arrays Comp N-Channel & P-Channel
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD1115SAL technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-2mA
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
500R
Drain to Source Voltage (Vdss)
10.6V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
13.2V
Input Capacitance
3pF
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Power Dissipation
500mW
Mount
Surface Mount
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
500mW
Rds On Max
1.8kR
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Advanced Linear Devices ALD1115SAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD1115SAL to view detailed technical specifications.
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