The ALD1117SAL is a P-channel junction field-effect transistor with a drain to source breakdown voltage of -12V and a maximum operating temperature of 70°C. It features a maximum power dissipation of 500mW and a continuous drain current of -1.3mA. The device is packaged in a surface mount SOIC package and is RoHS compliant.
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Advanced Linear Devices ALD1117SAL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -1.3mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 1.8kR |
| Drain to Source Voltage (Vdss) | 10.6V |
| Gate to Source Voltage (Vgs) | -13.2V |
| Input Capacitance | 3pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 1.8kR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Advanced Linear Devices ALD1117SAL to view detailed technical specifications.
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