The ALD111933MAL is a 2 N-Channel MOSFET with a drain to source breakdown voltage of 10V and a drain to source resistance of 500R. It operates within a temperature range of 0°C to 70°C and has a maximum power dissipation of 500mW. The device is packaged in a surface mount MSOP package and is not RoHS compliant.
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Advanced Linear Devices ALD111933MAL technical specifications.
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 6.9mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| RoHS Compliant | No |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
| RoHS | Not Compliant |
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