Advanced Linear Devices
ALD111933PAL
Small Signal Field-Effect Transistor, 10.6V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, PA, DIP-8
PackageDIP
MountingThrough Hole
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD111933PAL technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
6.9mA
Drain to Source Breakdown Voltage
10V
Drain to Source Resistance
500R
Drain to Source Voltage (Vdss)
10.6V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
10.6V
Input Capacitance
2.5pF
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Max Power Dissipation
500mW
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500mW
Rds On Max
500R
RoHS Compliant
No
Series
EPAD®
Turn-Off Delay Time
10ns
Compliance
RoHS
Not Compliant
Datasheet
Advanced Linear Devices ALD111933PAL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD111933PAL to view detailed technical specifications.
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