Small Signal Field-Effect Transistor, 10.6V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SA, SOIC-8
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Advanced Linear Devices ALD111933SAL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Advanced Linear Devices ALD111933SAL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.9mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 500R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10.6V |
| Input Capacitance | 2.5pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 500R |
| RoHS Compliant | No |
| Series | EPAD® |
| Turn-Off Delay Time | 10ns |
| RoHS | Not Compliant |
Download the complete datasheet for Advanced Linear Devices ALD111933SAL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
