MOSFET Dual N-Ch EPAD FET Array VGS=0.0V
Advanced Linear Devices ALD212900PAL technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 2 N-Channel |
| Input Capacitance | 30pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 14R |
| Series | EPAD®, Zero Threshold™ |
| RoHS | Compliant |
No datasheet is available for this part.
