N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element transistor is housed in a TO-262 (I2PAK) plastic package with a through-hole mounting style and 3 pins plus a tab. Key specifications include a maximum gate-source voltage of ±30V, 600mΩ drain-source resistance at 10V, and a typical gate charge of 35.9nC at 10V. Maximum power dissipation is 174W, with an operating temperature range of -55°C to 150°C.
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Advanced Power Electronics AP10N70R technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.2 |
| Package Width (mm) | 4.44 |
| Package Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Maximum Drain Source Resistance | 600@10VmOhm |
| Typical Gate Charge @ Vgs | 35.9@10VnC |
| Typical Gate Charge @ 10V | 35.9nC |
| Typical Input Capacitance @ Vds | 1950@15VpF |
| Maximum Power Dissipation | 174000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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