N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element transistor is housed in a TO-262 (I2PAK) plastic package with a through-hole mounting style and 3 pins plus a tab. Key specifications include a maximum gate-source voltage of ±30V, 600mΩ drain-source resistance at 10V, and a typical gate charge of 35.9nC at 10V. Maximum power dissipation is 174W, with an operating temperature range of -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP10N70R technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
I2PAK
Package/Case
TO-262
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.2
Package Width (mm)
4.44
Package Height (mm)
8.6
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-262AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
600@10VmOhm
Typical Gate Charge @ Vgs
35.9@10VnC
Typical Gate Charge @ 10V
35.9nC
Typical Input Capacitance @ Vds
1950@15VpF
Maximum Power Dissipation
174000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP10N70R Datasheet
Download the complete datasheet for Advanced Power Electronics AP10N70R to view detailed technical specifications.
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