N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 600V and continuous drain current of 11A. Features a low on-resistance of 370mOhm at 10V and a typical gate charge of 38nC. Housed in a TO-220CFM package with through-hole mounting, this single-element transistor offers a maximum power dissipation of 1920mW and operates across a temperature range of -55°C to 150°C.
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Advanced Power Electronics AP11S60I-HF technical specifications.
| Package Family Name | TO-220 |
| Package/Case | TO-220CFM |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.25 |
| Package Width (mm) | 4.55 |
| Package Height (mm) | 15.6 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Maximum Drain Source Resistance | 370@10VmOhm |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Typical Gate Charge @ 10V | 38nC |
| Typical Input Capacitance @ Vds | 1065@25VpF |
| Maximum Power Dissipation | 1920mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
