N-channel enhancement mode power MOSFET featuring 200V drain-source voltage and 13.4A continuous drain current. This single-element silicon transistor is housed in a 3-pin DPAK (TO-252AA) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±20V, a typical gate charge of 66nC at 10V, and a maximum drain-source on-resistance of 175mΩ at 10V. The DPAK package offers a 6.5mm x 5.7mm footprint with a 2.3mm height and 2.3mm pin pitch, supporting a maximum power dissipation of 83.3W.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP18T20GH-HF technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.7 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 13.4A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 175@10VmOhm |
| Typical Gate Charge @ Vgs | 66@10VnC |
| Typical Gate Charge @ 10V | 66nC |
| Typical Input Capacitance @ Vds | 2900@25VpF |
| Maximum Power Dissipation | 83300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP18T20GH-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP18T20GH-HF to view detailed technical specifications.
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