P-channel enhancement mode power MOSFET, 30V drain-source voltage, 5A continuous drain current. Features 8-pin SO package (SOP, MS-012AA) with gull-wing leads for surface mounting. Dual drain configuration with 53mOhm maximum drain-source resistance at 10V. Operating temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP4953GM-HF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.05
Package Width (mm)
3.9
Package Height (mm)
1.4
Seated Plane Height (mm)
1.55
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
53@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
595@25VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP4953GM-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP4953GM-HF to view detailed technical specifications.
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