N-channel enhancement mode power MOSFET featuring a 25V drain-source voltage and 66A continuous drain current. This single-element transistor is housed in a TO-252 DPAK package with a 3-pin gull-wing lead configuration for surface mounting. Key electrical characteristics include a low 9mOhm maximum drain-source resistance at 10V and a typical gate charge of 23nC at 5V. The plastic DPAK package measures 6.5mm x 5.7mm x 2.3mm, supporting a maximum power dissipation of 66W across an operating temperature range of -55°C to 150°C.
PackageDPAK
MountingSurface Mount
Quick Jump:
Technical Specifications
Advanced Power Electronics AP70L02H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.7
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
66A
Maximum Drain Source Resistance
9@10VmOhm
Typical Gate Charge @ Vgs
23@5VnC
Typical Input Capacitance @ Vds
790@25VpF
Maximum Power Dissipation
66000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP70L02H Datasheet
Download the complete datasheet for Advanced Power Electronics AP70L02H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.