N-channel enhancement mode power MOSFET featuring a 25V drain-source voltage and 66A continuous drain current. This single-element transistor is housed in a TO-251 package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a low 9mOhm drain-source on-resistance at 10V, typical gate charge of 23nC at 5V, and input capacitance of 790pF at 25V. Maximum power dissipation reaches 66W, with an operating temperature range from -55°C to 150°C.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP70L02J technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
TO-251
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.55
Package Width (mm)
2.3
Package Height (mm)
5.8
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
66A
Maximum Drain Source Resistance
9@10VmOhm
Typical Gate Charge @ Vgs
23@5VnC
Typical Input Capacitance @ Vds
790@25VpF
Maximum Power Dissipation
66000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP70L02J Datasheet
Download the complete datasheet for Advanced Power Electronics AP70L02J to view detailed technical specifications.
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