N-channel enhancement mode power MOSFET in a TO-251 package. Features a 25V drain-source voltage, 75A continuous drain current, and low 5mΩ drain-source resistance at 10V. This single-element transistor offers a typical gate charge of 28nC at 4.5V and input capacitance of 2070pF at 25V. With a maximum power dissipation of 96W, it operates from -55°C to 150°C.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP88LS02J technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-251
Package/Case
TO-251
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.55
Package Width (mm)
2.3
Package Height (mm)
5.8
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
75A
Maximum Drain Source Resistance
5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2070@25VpF
Maximum Power Dissipation
96000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP88LS02J Datasheet
Download the complete datasheet for Advanced Power Electronics AP88LS02J to view detailed technical specifications.
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