N-channel enhancement mode power MOSFET in a TO-251 package. Features a 25V drain-source voltage, 75A continuous drain current, and low 5mΩ drain-source resistance at 10V. This single-element transistor offers a typical gate charge of 28nC at 4.5V and input capacitance of 2070pF at 25V. With a maximum power dissipation of 96W, it operates from -55°C to 150°C.
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Advanced Power Electronics AP88LS02J technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | TO-251 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.55 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.8 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Drain Source Resistance | 5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2070@25VpF |
| Maximum Power Dissipation | 96000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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