N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 4A continuous drain current. This surface-mount transistor is housed in an 8-pin SOIC (Small Outline IC) package with gull-wing leads, measuring 5.05mm in length and 3.9mm in width. It offers a low 90mOhm drain-source on-resistance at 10V gate-source voltage and a typical gate charge of 6nC at 4.5V. The component operates within a temperature range of -55°C to 150°C.
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Advanced Power Electronics AP9477GM technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.05 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.4 |
| Seated Plane Height (mm) | 1.55 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±25V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | 90@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 510@25VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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