N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 4A continuous drain current. This surface-mount transistor is housed in an 8-pin SOIC (Small Outline IC) package with gull-wing leads, measuring 5.05mm in length and 3.9mm in width. It offers a low 90mOhm drain-source on-resistance at 10V gate-source voltage and a typical gate charge of 6nC at 4.5V. The component operates within a temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9477GM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.05
Package Width (mm)
3.9
Package Height (mm)
1.4
Seated Plane Height (mm)
1.55
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
4A
Maximum Drain Source Resistance
90@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
510@25VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9477GM Datasheet
Download the complete datasheet for Advanced Power Electronics AP9477GM to view detailed technical specifications.
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