N-channel enhancement mode power MOSFET in a D2PAK (TO-263) surface-mount package. Features a 30V drain-source voltage, 200A continuous drain current, and low 2.8mOhm drain-source resistance at 10V. The 3-pin D2PAK package offers gull-wing leads for robust surface mounting. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 156W.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP98T03GS-HF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.1
Package Width (mm)
9.05
Package Height (mm)
4.75
Seated Plane Height (mm)
4.9
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
200A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
2.8@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
4960@25VpF
Maximum Power Dissipation
156000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP98T03GS-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP98T03GS-HF to view detailed technical specifications.
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