N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 4.6A continuous drain current. This dual-source transistor is housed in an 8-pin TSSOP (Thin Shrink Small Outline Package) with gull-wing leads for surface mounting. Key specifications include a maximum gate-source voltage of ±12V, a low 28mOhm drain-source resistance at 4.5V, and a typical gate charge of 12.5nC. The compact plastic package measures 3mm x 4.4mm x 1.05mm, designed for efficient PCB integration.
PackageTSSOP
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9926GEO-HF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
TSSOP
Package Description
Thin Shrink Small Outline Package
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
3
Package Width (mm)
4.4
Package Height (mm)
1.05(Max)
Seated Plane Height (mm)
1.2(Max)
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Jedec
MO-153AA
Configuration
Dual Dual Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
4.6A
Maximum Gate Threshold Voltage
0.5(Min)V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
12.5@5VnC
Typical Input Capacitance @ Vds
355@20VpF
Maximum Power Dissipation
1000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9926GEO-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP9926GEO-HF to view detailed technical specifications.
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