N-channel power MOSFET with a 60V drain-source voltage and 25A continuous drain current. Features a TO-251 package with 3 pins, through-hole mounting, and a maximum power dissipation of 39000mW. Offers a low drain-source on-resistance of 36mOhm at 10V and a typical gate charge of 18nC at 4.5V. Operates across a wide temperature range from -55°C to 150°C.
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Advanced Power Electronics AP9971GJ technical specifications.
| Package/Case | TO-251 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.55 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.8 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 25A |
| Maximum Drain Source Resistance | 36@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1700@25VpF |
| Maximum Power Dissipation | 39000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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