N-channel enhancement mode power MOSFET, 60V drain-source voltage, 25A continuous drain current. Features 36mΩ maximum drain-source resistance at 10V, 18nC typical gate charge at 4.5V, and 1700pF typical input capacitance at 25V. Packaged in a TO-251 (TO-251AB) plastic through-hole mount with 3 pins, offering a maximum power dissipation of 39000mW and an operating temperature range of -55°C to 150°C.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP9971J technical specifications.
General
Package/Case
TO-251
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.55
Package Width (mm)
2.3
Package Height (mm)
5.8
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Maximum Drain Source Resistance
36@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
39000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9971J Datasheet
Download the complete datasheet for Advanced Power Electronics AP9971J to view detailed technical specifications.
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