N-channel enhancement mode power MOSFET, 60V drain-source voltage, 25A continuous drain current. Features 36mΩ maximum drain-source resistance at 10V, 18nC typical gate charge at 4.5V, and 1700pF typical input capacitance at 25V. Packaged in a TO-251 (TO-251AB) plastic through-hole mount with 3 pins, offering a maximum power dissipation of 39000mW and an operating temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Advanced Power Electronics AP9971J datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Advanced Power Electronics AP9971J technical specifications.
| Package/Case | TO-251 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.55 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.8 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 25A |
| Maximum Drain Source Resistance | 36@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1700@25VpF |
| Maximum Power Dissipation | 39000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Advanced Power Electronics AP9971J to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
